Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

For the first time, nanoscale phases and layers of BaSi 2 were obtained by implantation Ba + ions with an energy E 0 =20-30 keV in surface layer Si(111). In particular, it is shown that at a dose D~10 15 cm -2 nanophases band gap g ~0.85 eV are formed, 17 nanolayer =0.67 eV. The composition structure barium disilicide nanostructure investigated light absorption spectroscopy Auger electron spectroscopy, X-ray morphology was studied scanning microscopy. optimal modes ion annealing for obtaining near-surface region Si have been established. Using method degree coverage estimated. It has D≥6·10 16 . Keywords: implantation, nanostructure, nanophase, annealing, disilicide, electrons, coverage.